Silicon single crystal wafer, manufacturing method thereof and method of detecting defects

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United States of America Patent

PATENT NO 9406528
APP PUB NO 20140191370A1
SERIAL NO

14028063

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Abstract

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A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

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Patent Owner(s)

Patent OwnerAddress
SK SILTRON CO LTD53 IMSU-RO GUMI-SI GYEONGSANGBUK-DO 39386

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sim, Woo Young Seongnam-si, KR 4 43

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