Method and system for manufacturing semiconductor epitaxy structure
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United States of America Patent
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Aug 2, 2016
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app pub date -
Jun 29, 2015
filing date -
Jun 29, 2015
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Abstract
A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed.
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