Semiconductor device and method for manufacturing the same
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United States of America Patent
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Aug 2, 2016
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N/A
app pub date -
Sep 3, 2015
filing date -
May 29, 2015
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a metal layer containing boron, a semiconductor film extending in a direction intersecting with a direction in which the metal layer extends, a charge storage film provided between the semiconductor film and the metal layer, a first dielectric film provided between the charge storage film and the metal layer, and a nitride film provided between the first dielectric film and the metal layer. The nitride film includes a first titanium nitride film provided in contact with the first dielectric film, a second titanium nitride film provided in contact with the metal layer, and an amorphous nitride film provided between the first titanium nitride film and the second titanium nitride film.
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