Semiconductor device with a vertical channel formed through a plurality of semiconductor layers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 2, 2016
Issued Date -
N/A
app pub date -
Oct 31, 2014
filing date -
Jul 3, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Semiconductor devices and manufacturing methods are provided for making channel and gate lengths independent from lithography. Also, semiconductor devices and manufacturing methods are provided for increasing resistivity between drain and channel to allow for higher voltage operation. For example, a semiconductor device includes a first doped layer implanted in a semiconductor substrate forming one of a source or a drain and a gate metal layer disposed over the first doped layer. The semiconductor device further includes a second doped layer disposed over the gate metal forming the other the source or the drain, where the first doped layer, the gate metal layer and the second doped layer form a vertical stack of layers of the semiconductor device. The semiconductor device further includes a conduction channel formed in a trench that extends vertically through the vertical stack of layers and terminates at the semiconductor substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully