Nonvolatile semiconductor memory device including a charge storage layer formed on first and second insulating layers
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United States of America Patent
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Aug 2, 2016
Grant Date -
Sep 11, 2014
app pub date -
May 22, 2014
filing date -
Aug 25, 2009
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer, and a control gate electrode formed on the second insulating layer. At least one inelastic scattering film that reduces energy of electrons by scattering is contained in at least one of the charge storage layer and second insulating layer.
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