Non-volatile memory device
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United States of America Patent
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Aug 2, 2016
Grant Date -
Feb 5, 2015
app pub date -
Mar 10, 2014
filing date -
Jul 30, 2013
priority date (Note) -
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Abstract
According to one embodiment, a non-volatile memory device includes a first stacked electrode provided above a underlying layer, a second stacked electrode juxtaposed with the first stacked electrode above the underlying layer, a plurality of first semiconductor layers piercing the first stacked electrode in a direction perpendicular to the underlying layer, and a second semiconductor layer piercing the second stacked electrode in a direction perpendicular to the underlying layer. The device further includes a memory film provided between the first stacked electrode and the first semiconductor layers, and between the second stacked electrode and the second semiconductor layer, and a link part provided between the underlying layer and the first stacked electrode, and between the underlying layer and the second stacked electrode. The link part is electrically connected to one end of each of the first semiconductor layers and one end of the second semiconductor layer.
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