Resistive memory having confined filament formation

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United States of America Patent

PATENT NO 9406880
SERIAL NO

14478408

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Abstract

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Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC8000 SOUTH FEDERAL WAY BOISE ID 83707

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Jun Boise, US 1407 16613
Marsh, Eugene P Boise, US 225 5752

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