Nonvolatile resistance change element

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United States of America Patent

PATENT NO 9406882
APP PUB NO 20130234097A1
SERIAL NO

13603718

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Abstract

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According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a first layer and a second layer. The second electrode contains at least one metal element selected from Ag, Cu, Ni, Co, Al, and Ti. The first layer is arranged between the first electrode and the second electrode. The second layer is arranged between the first electrode and the first layer. A diffusion coefficient of the metal element in the second layer is larger than a diffusion coefficient of the metal element in the first layer.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujii, Shosuke Fujisawa, JP 67 933
Ichihara, Reika Yokohama, JP 75 745
Miyagawa, Hidenori Yokohama, JP 31 199

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