Circuits and methods related to low-noise amplifiers having improved linearity
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United States of America Patent
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Aug 2, 2016
Grant Date -
Nov 13, 2014
app pub date -
May 9, 2014
filing date -
May 10, 2013
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Abstract
Disclosed are circuits and methods related to low-noise amplifiers (LNAs) having improved linearity. In some embodiments, a radio-frequency (RF) amplifier circuit can include a first amplifying transistor configured to amplify an RF signal. The RF amplifier circuit can further include a switchable inductance circuit that couples the first amplifying transistor to a signal ground. The switchable inductance circuit can be configured to be capable of providing at least two different inductance values that yield different linearity levels for the RF amplifier circuit. A high linearity performance can be obtained with a higher inductance and a lower bias voltage, thereby reducing power consumption of the RF amplifier. Examples of methods and devices related to such an RF amplifier circuit are disclosed.
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