Highly selective oxygen free silicon nitride etch

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United States of America Patent

PATENT NO 9412609
SERIAL NO

14726044

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Abstract

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A method for selectively etching silicon nitride with respect to silicon oxide is provided. An oxygen free silicon nitride etch gas comprising H2 and either CF4 or CXHYFZ (X≧1, Y≧1, Z≧1) is provided. An RF power is provided to form the etch gas into a plasma, wherein the silicon nitride is exposed to the plasma.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ying-Ren Hsinchu, TW 7 15
Heo, Seongjun Tainan, TW 11 39
Nagabhirava, Bhaskar Albany, US 9 40
Wu, Chih-Hsiang Hsinchu, TW 510 4632

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