Semiconductor device, solid-state image sensor, methods of manufacturing the same, and camera

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United States of America Patent

PATENT NO 9412778
APP PUB NO 20150303227A1
SERIAL NO

14684634

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Abstract

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A method of manufacturing a semiconductor device includes forming a silicon compound layer containing nitrogen on a substrate where a silicide layer and an element isolating portion have been formed, forming an opening in the silicon compound layer, and forming an interlayer insulating film which covers the silicon compound layer and the opening. The opening is formed to lie within an area of the silicon compound layer that overlaps the element isolating portion.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishino, Hideaki Fujisawa, JP 24 69

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