Method for embedded diamond-shaped stress element

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United States of America Patent

PATENT NO 9412843
APP PUB NO 20150340465A1
SERIAL NO

14285967

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Abstract

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A method of manufacturing a semiconductor device with an embedded layer, by anisotropically etching a substrate adjacent to an already formed gate structure. A dummy layer is deposited in the previously etched region, and a second spacer is formed next to the first spacer. The dummy layer is removed, and a second anisotropic etch is performed. A semiconductor substrate is then epitaxially grown in the etched out region to form the embedded layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harley, Eric C Lagrangeville, US 21 185
Holt, Judson R Wappingers Falls, US 168 1649
Wallner, Jin Z Albany, US 7 58
Wallner, Thomas A Albany, US 20 290

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