Reduced resistance short-channel InGaAs planar MOSFET

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United States of America Patent

PATENT NO 9412865
SERIAL NO

15090868

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A metal-oxide-semiconductor field effect transistor (MOSFET) and a method of fabricating a MOSFET are described. The method includes depositing and patterning a dummy gate stack above an active channel layer formed on a base. The method also includes selectively etching the active channel layer leaving a remaining active channel layer, and epitaxially growing silicon doped active channel material adjacent to the remaining active channel layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kerber, Pranita Mount Kisco, US 101 712
Ouyang, Qiqing C Yorktown Heights, US 60 1100
Reznicek, Alexander Troy, US 1407 11147

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