Plasma processing apparatus, plasma processing method and high frequency generator
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United States of America Patent
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Aug 16, 2016
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N/A
app pub date -
Feb 11, 2014
filing date -
Feb 12, 2013
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Abstract
A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.
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