Embedded carbon-doped germanium as stressor for germanium nFET devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9419138
APP PUB NO 20160093735A1
SERIAL NO

14500345

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (GeH3—CH3) as the carbon source. The carbon-doped germanium stressor regions that are provided yield more strain in less volume since a carbon atom is much smaller than a silicon atom.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dittmar, Jeffrey L Troy, US 2 3
Fogel, Keith E Hopewell Junction, US 270 4144
Naczas, Sebastian Albany, US 15 131
Reznicek, Alexander Troy, US 1407 11147
Sadana, Devendra K Pleasantville, US 897 9915

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Feb 16, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Feb 16, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00