Passivation and alignment of piezoelectronic transistor piezoresistor
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United States of America Patent
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Aug 16, 2016
Grant Date -
May 5, 2016
app pub date -
Jun 23, 2015
filing date -
Oct 31, 2014
priority date (Note) -
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Abstract
A method of forming a piezoelectronic transistor (PET) device, the PET device, and a semiconductor including the PET device are described. The method includes forming a first metal layer, forming a layer of a piezoelectric (PE) element on the first metal layer, and forming a second metal layer on the PE element. The method also includes forming a well above the second metal layer, forming a piezoresistive (PR) material in the well and above the well, and forming a passivation layer and a top metal layer above the PR material at the diameter of the PR material above the well, wherein a cross sectional shape of the well, the PR material above the well, the passivation layer, and the top metal layer is a T-shaped structure. The method further includes forming a metal clamp layer as a top layer of the PET device.
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