Composition for forming resist protection film for lithography and method for forming pattern of semiconductor device using the same
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United States of America Patent
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Aug 23, 2016
Grant Date -
Jan 7, 2016
app pub date -
Sep 11, 2015
filing date -
Mar 11, 2013
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Abstract
Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof.
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