Dividing lithography exposure fields to improve semiconductor fabrication
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United States of America Patent
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Aug 23, 2016
Grant Date -
Jun 23, 2016
app pub date -
Dec 17, 2014
filing date -
Dec 17, 2014
priority date (Note) -
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Abstract
In an approach to determine one or more exposure areas in a reticle field and associated lithography process parameters for the one or more exposure areas, a computer receives a semiconductor design and sends the semiconductor design to a design analysis program. Additionally, the computer receives data from the design analysis program. Furthermore, the computer determines the one or more exposure areas in the reticle field, and at least one lithography process parameter for each exposure area of the one or more exposure areas in the reticle field based, at least in part, on the data received from the design analysis program, the semiconductor design, and one or more clustering algorithms associated with the design analysis program.
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