Equalizer and semiconductor memory device including the same
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United States of America Patent
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Aug 23, 2016
Grant Date -
Aug 7, 2014
app pub date -
Jan 28, 2014
filing date -
Feb 4, 2013
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Abstract
Provided are an equalizer and a semiconductor memory device including the same. The equalizer includes a delay circuit and an inverting circuit. The delay circuit is configured to output, in response to a select signal, one of a delay signal delaying an input signal applied to an input/output node and an inverted signal inverting the input signal. The inverting circuit is configured to invert a signal provided from the delay circuit and output the inverted signal to the input/output node. The equalizer is configured such that when the delay circuit outputs the delay signal, the equalizer operates as an inductive bias circuit amplifying the input signal and outputting the amplified input signal, and when the delay circuit outputs the inverted signal, the equalizer operates as a latch circuit storing and outputting the input signal.
First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SAMSUNG ELECTRONICS CO LTD | GYEONGGI-DO 16677 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Bae, Seung-Jun | Hwaseong-si, KR | 77 | 1048 |
Ha, Kyung-Soo | Hwaseong-si, KR | 36 | 178 |
Kim, Dae-Hyun | Hwaseong-si, KR | 198 | 1593 |
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