Capacitors in integrated circuits and methods of fabrication thereof

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United States of America Patent

PATENT NO 9425140
SERIAL NO

14083176

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Abstract

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In one embodiment, a capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first metal bars are longer than the first vias. Second metal bars and second vias are disposed in a second via level, the second metal bars are coupled to the first potential node. The second metal bars are longer than the second vias. The second via level is above the first via level and the first metal bars are parallel to the second metal bars. Each of the first metal bars has a first end, an opposite second end, and a middle portion between the first and the second ends. Each of the middle portions of the first metal bars and the second ends of the first metal bars do not contact any metal line.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AG85579 NEUBIBERG

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chae, Moosung Poughkeepsie, US 15 147
Kim, Sun-Oo Hopewell Junction, US 27 233
Moon, Bum Ki Munich, DE 43 198

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