Method for growing an epitaxial film on a phosphorous-doped silicon wafer
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United States of America Patent
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Aug 23, 2016
Grant Date -
Jan 2, 2014
app pub date -
Jun 24, 2013
filing date -
Jun 29, 2012
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Abstract
A method includes: a backside-oxidation-film-formation step in which an oxidation film is formed on a backside of a silicon wafer; a backside-oxidation-film-removal step in which the oxidation film provided at an outer periphery of the silicon wafer is removed; an argon-annealing step in which the silicon wafer after the backside-oxidation-film-removal step is subjected to a heat treatment in an argon gas atmosphere at a temperature in a range from 1200 to 1220 degrees C. for 60 minutes or more and 120 minutes or less; and an epitaxial-film-formation step in which an epitaxial film is formed on a surface of the silicon wafer after the argon-annealing step.
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