Semiconductor device and manufacturing method thereof
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United States of America Patent
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Aug 23, 2016
Grant Date -
Mar 17, 2016
app pub date -
Mar 3, 2015
filing date -
Sep 12, 2014
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Abstract
A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type between the first electrode and the second electrode, a plurality of second semiconductor regions of a second conductivity type selectively provided between the first semiconductor region and the second electrode, a third semiconductor region of the first conductivity type provided between each of the second semiconductor regions and the second electrode, an insulating film provided on the first semiconductor region in a location between adjacent second semiconductor regions, the second semiconductor regions, and the third semiconductor region; and a third electrode located over the insulating film, wherein a portion of the insulating film and the third electrode extend inwardly of the second semiconductor regions.
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