P-I-N photodiode with dopant diffusion barrier layer

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Aug 23, 2016
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May 22, 2014
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Oct 8, 2013
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Oct 8, 2012

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Abstract

According to one aspect of the invention, there is provided a pin photodetector comprising a dopant diffusion barrier layer disposed within an active light absorbing region of the pin photodetector.

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ADVANCED MICRO FOUNDRY PTE LTD	11 SCIENCE PARK ROAD SINGAPORE 117385

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Lim, Andy Eu-Jin	Singapore, SG	1	11
Liow, Tsung-Yang	Singapore, SG	9	62
Lo, Patrick Guo-Qiang	Singapore, SG	12	117

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P-I-N photodiode with dopant diffusion barrier layer

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United States of America Patent

14048379

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PATENT NO	9425341
APP PUB NO	20140138789A1
SERIAL NO	14048379
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
August 23, 2016	US,9425341,B2 US9425341B2	GRANTED PATENT AS SECOND PUBLICATION
May 22, 2014	US,20140138789,A1 US20140138789A1	FIRST PUBLISHED PATENT APPLICATION

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14048379

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