Copper alloy bonding wire for semiconductor
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United States of America Patent
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Aug 30, 2016
Grant Date -
Apr 19, 2012
app pub date -
Jun 23, 2010
filing date -
Jun 24, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.
First Claim
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International Classification(s)
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- B23K:SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLA....
- B21C:MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PR....
- C22F:CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS MET....
- C22C:ALLOYS
- B32B:LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA....
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