Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystal
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United States of America Patent
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Aug 30, 2016
Grant Date -
Jul 31, 2014
app pub date -
Mar 28, 2014
filing date -
Jan 15, 2010
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Abstract
Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following Z1>0 expression (1), wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2<0 expression (2), wherein Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate.
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