Edge termination for super junction MOSFET devices
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United States of America Patent
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Aug 30, 2016
Grant Date -
Jun 6, 2013
app pub date -
Dec 1, 2011
filing date -
Dec 1, 2011
priority date (Note) -
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Abstract
In one embodiment, a Super Junction metal oxide semiconductor field effect transistor (MOSFET) device can include a substrate and a charge compensation region located above the substrate. The charge compensation region can include a plurality of columns of P type dopant within an N type dopant region. In addition, the Super Junction MOSFET can include a termination region located above the charge compensation region and the termination region can include an N− type dopant. Furthermore, the Super Junction MOSFET can include an edge termination structure. The termination region includes a portion of the edge termination structure.
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