Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process
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United States of America Patent
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Aug 30, 2016
Grant Date -
Aug 4, 2016
app pub date -
Mar 21, 2016
filing date -
Jan 29, 2015
priority date (Note) -
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Abstract
A method includes forming a plurality of trenches to define a fin, forming a first layer of insulating material in the trenches, forming a sidewall spacer on opposite sides of the fin above an upper surface of the first layer, removing the first layer and performing a fin-trimming etching process to define a plurality of increased-size trenches. The method also includes forming a first oxidation-blocking layer of insulating material in the increased-size trenches, forming a second layer of insulating material above the oxidation-blocking layer, and performing a thermal anneal process to convert at least a part of the portion of the fin that is in contact with the second layer of insulating material into an oxide fin isolation region.
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