Semiconductor device having buried bit line and method for fabricating the same
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United States of America Patent
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Aug 30, 2016
Grant Date -
Jun 27, 2013
app pub date -
May 10, 2012
filing date -
Dec 27, 2011
priority date (Note) -
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Abstract
A method for fabricating a semiconductor device includes: forming an insulation layer over a semiconductor substrate; forming a first conductive layer over the insulation layer; forming a plurality of buried bit lines and insulation layer patterns isolated by a plurality of trenches, wherein the plurality of trenches are formed by etching the first conductive layer and the insulation layer; forming a sacrificial layer to gap-fill the trenches; forming a second conductive layer over the buried bit lines and the sacrificial layer; and forming a plurality of pillars over each of the buried bit lines by etching the second conductive layer.
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