Method for making a semiconductor device with sidewall spacers for confining epitaxial growth
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United States of America Patent
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Aug 30, 2016
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app pub date -
May 28, 2014
filing date -
May 28, 2014
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Abstract
A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate. At least one dielectric layer is formed adjacent an end portion of the semiconductor fins and within the space between adjacent semiconductor fins. A pair of sidewall spacers is formed adjacent outermost semiconductor fins at the end portion of the semiconductor fins. The at least one dielectric layer and end portion of the semiconductor fins between the pair of sidewall spacers are removed. Source/drain regions are formed between the pair of sidewall spacers.
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