Replacement metal gate FinFET

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9437436
APP PUB NO 20150137245A1
SERIAL NO

14609803

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Abstract

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A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jagannathan, Hemanth Guilderland, US 258 2195
Mehta, Sanjay C Niskayuna, US 106 783
Schmitz, Stefan Ballston Spa, US 78 495
Wang, Junli Singerlands, US 492 2776
Yeh, Chun-Chen Clifton Park, US 417 3476

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