Dielectric region in a bulk silicon substrate providing a high-Q passive resonator

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United States of America Patent

PATENT NO 9437539
SERIAL NO

14830816

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Structures and methods of making a dielectric region in a bulk silicon (Si) substrate of a mixed-signal integrated circuit (IC) provide a high-Q passive resonator. Deep trenches within the bulk Si substrate in <100> directions are expanded by wet etching to form contiguous cavities, which are filled by Si oxide to form a dielectric region. The dielectric region enhances the quality (Q) of an overlying passive resonator, formed in metallization layers of the mixed-signal IC.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dunn, James S Jericho, US 61 704
He, Zhong-Xiang Essex Junction, US 175 1736
Liu, Qizhi Lexington, US 213 1352

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