Vertical memory cell string with dielectric in a portion of the body

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United States of America Patent

PATENT NO 9437608
SERIAL NO

14581774

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Abstract

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Some embodiments include a memory cell string having a body having a channel extending therein and in contact with a source/drain, a select gate adjacent to the body, a plurality of access lines adjacent to the body, and a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate. The dielectric in the portion of the body does not extend along an entire length of the body. Other embodiments are described and claimed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goda, Akira Boise, US 301 4165
Liu, Haitao Boise, US 332 1454
Mouli, Chandra Boise, US 291 3855
Parat, Krishna K Palo Alto, US 85 1252

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