Dual-semiconductor complementary metal-oxide-semiconductor device
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United States of America Patent
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Sep 6, 2016
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app pub date -
Sep 18, 2015
filing date -
Sep 18, 2015
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Abstract
A method of forming an active device on a semiconductor wafer includes the steps of: forming a plurality of semiconductor fins on at least a portion of a semiconductor substrate; forming a dielectric layer on at least a portion of the semiconductor substrate, the dielectric layer filling gaps between adjacent fins; forming a plurality of gate structures on an upper surface of the dielectric layer; forming a channel region on the dielectric layer and under at least a portion of the gate structures, the channel region comprising a first crystalline semiconductor material; forming source and drain epitaxy regions on an upper surface of the dielectric layer and between adjacent gate structures, the source and rain regions being spaced laterally from one another; and replacing the channel region with a second crystalline semiconductor material after high-temperature processing used in fabricating the active device has been completed.
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