Semiconductor device comprising a graphene wire

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United States of America Patent

PATENT NO 9437716
APP PUB NO 20150325524A1
SERIAL NO

14803751

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Abstract

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According to one embodiment, a semiconductor device includes a catalyst underlying layer formed on a substrate including semiconductor elements formed thereon and processed in a wiring pattern, a catalyst metal layer that is formed on the catalyst underlying layer and whose width is narrower than that of the catalyst underlying layer, and a graphene layer growing with a sidewall of the catalyst metal layer set as a growth origin and formed to surround the catalyst metal layer.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Isobayashi, Atsunobu Yokohama, JP 39 477
Kajita, Akihiro Yokohama, JP 77 798
Saito, Tatsuro Yokohama, JP 40 213
Wada, Makoto Yokohama, JP 121 1311
Yamazaki, Yuichi Inagi, JP 75 846

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