Tunnel FET

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9437735
SERIAL NO

14824737

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Abstract

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According to one embodiment, a tunnel FET includes a semiconductor region of a first conductivity type, a gate electrode provided on a surface portion of the semiconductor region via a gate insulating film, a source region provided in the semiconductor region on one side of the gate electrode, and a drain region provided in the semiconductor region on the other side of the gate electrode. The source region is a region of either the first conductivity type or a second conductivity type having a higher impurity concentration than the semiconductor region of the first conductivity type. The drain region includes a Schottky barrier junction.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hokazono, Akira Kawasaki Kanagawa, JP 55 994
Kondo, Yoshiyuki Yokohama Kanagawa, JP 76 1228

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