Non-volatile memory device including charge trapping layer and method for fabricating the same

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United States of America Patent

PATENT NO 9437751
APP PUB NO 20150179819A1
SERIAL NO

14555040

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Abstract

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A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.

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Patent Owner(s)

  • SK INNOVATION CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jun-Hyung Daejeon, KR 188 2536

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