Method of fabricating a flip chip light emitting diode (FCLED) die having N-conductor layer
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United States of America Patent
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Sep 6, 2016
Grant Date -
Jun 23, 2016
app pub date -
Feb 8, 2016
filing date -
Jul 27, 2014
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Abstract
A method for fabricating a flip chip light emitting diode (FCLED) die includes forming an epitaxial stack on a carrier substrate having an n-type confinement layer, a multiple quantum well (MQW) layer, and a p-type confinement layer, forming a mirror layer on the p-type confinement layer, forming an n-trench in the n-type confinement layer, forming an n-conductor layer in the n-trench on the n-type confinement layer, forming a p-metal layer on the p-type confinement layer, forming a first electrical isolator layer on the n-conductor layer and a second electrical isolator layer on the p-metal layer, forming a p-pad on the first electrical isolator layer, and forming an n-pad the second electrical isolator layer.
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