Semiconductor device including gate drivers around a periphery thereof

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United States of America Patent

PATENT NO 9443839
APP PUB NO 20140151795A1
SERIAL NO

14091718

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Abstract

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A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (“LDMOS”) cells, and a metallic layer electrically coupled to the plurality of LDMOS cells. The semiconductor device also includes a plurality of gate drivers positioned along a periphery of the semiconductor die and electrically coupled to gates of the plurality of LDMOS cells through the metallic layer.

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Patent Owner(s)

Patent OwnerAddress
ALTERA CORPORATION101 INNOVATION DRIVE SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Demski, Jeffrey Orefield, US 12 219
Feygenson, Anatoly Hillsborough, US 22 461
Lopata, Douglas Dean Boyertown, US 28 930
Lotfi, Ashraf W Bridgewater, US 88 3970
Norton, Jay Wind Gap, US 7 49
Weld, John D Ledgewood, US 29 824

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