Gas-phase synthesis method for forming semiconductor nanowires
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United States of America Patent
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Sep 20, 2016
Grant Date -
Apr 25, 2013
app pub date -
May 11, 2011
filing date -
May 11, 2010
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Abstract
The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.
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