Methods and systems for using oxidation layers to improve device surface uniformity
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United States of America Patent
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Sep 20, 2016
Grant Date -
Sep 24, 2015
app pub date -
Jan 6, 2015
filing date -
Mar 24, 2014
priority date (Note) -
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Abstract
The invention discloses a treatment process for a semiconductor, comprising providing a substrate, the substrate comprises silicon material; defining a trench region; removing the trench region using a plasma etching process and exposing a trench surface, the trench surface comprising surface defects; forming an oxidation layer overlaying the trench surface; removing the oxidation layer and at least a portion of the surface defects; expositing a treated trench surface, the treated trench surface being substantially free from surface defects; and forming a layer of silicon germanium material overlaying the treated trench surface. The invention further provides a semiconductor processing technique used to eliminate or reduce dislocation defect on the semiconductor device and improve device performance. In the treatment process, a substrate is subjected to at least one oxidation-deoxidation processes, where an oxidation layer is formed and then removed.
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