High germanium content FinFET devices having the same contact material for nFET and pFET devices
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United States of America Patent
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Sep 20, 2016
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app pub date -
Jun 19, 2015
filing date -
Jun 19, 2015
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Abstract
FinFET structures are formed on silicon germanium fins having high germanium content. Silicon germanium source/drain regions formed in fin recesses in nFET regions are provided with arsenic or phosphorus-doped germanium caps. Uniform tensile strain is obtained through the use of ungraded silicon germanium in the n-type source/drain regions. Location of the germanium caps above the fin structure ensures they have no materially negative impact on strain. Boron doped germanium source/drain regions are formed in fin recesses in pFET regions and provide for compressive strain. Contact formation using the same material in both nFET and pFET regions of the same substrate facilitates fabrication.
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