Method for depositing silicon nanocrystals in hollow fibers

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United States of America Patent

PATENT NO 9452446
APP PUB NO 20110104412A1
SERIAL NO

12934125

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Abstract

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A method for depositing a layer of silicon nanocrystals upon the inside surface of hollow fibers is disclosed. In particular, the method includes inserting a hollow glass fiber into a solution of hydrogen silsesquioxane, removing the solvent and heating the hollow glass fiber to a temperature suitable to form silicon nanocrystals, and subsequently cooling the hollow glass fiber.

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Patent Owner(s)

Patent OwnerAddress
THE GOVERNORS OF THE UNIVERSITY OF ALBERTA1-560 ENTERPRISE SQUARE 10230 JASPER AVENUE EDMONTON ALBERTA T5J 4P6

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bianucci, Pablo Edmonton, CA 1 1
Meldrum, Al Edmonton, CA 2 9
Rodriguez, Jose Roberto Edmonton, CA 2 22
Veinot, Jonathan St. Albert, CA 9 672

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