Nanowire grid structure having grid patterns and a sacrificial layer

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United States of America Patent

PATENT NO 9456501
APP PUB NO 20150000963A1
SERIAL NO

14365506

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Abstract

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Provided is a method of manufacturing a nanowire, including: forming a plurality of grid patterns on a grid base layer; forming a sacrificial layer on the grid base layer on which the grid patterns are formed; producing a nanowire grid structure by forming a nanowire base layer on the sacrificial layer; forming a nanowire by wet etching the nanowire base layer; and separating the grid patterns from the nanowire by etching the sacrificial layer.

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Patent Owner(s)

Patent OwnerAddress
LG INNOTEK CO LTDSEOUL 07796

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jin Su Seoul, KR 139 951
Lee, Jun Seoul, KR 121 1391
Lee, Young Jae Seoul, KR 80 899
Yoo, Kyoung Jong Seoul, KR 18 145

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