Method of making semiconductor substrate using an etching mask and method of making liquid ejection head substrate using an etching mask

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United States of America Patent

PATENT NO 9457559
APP PUB NO 20150348791A1
SERIAL NO

14723312

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Abstract

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A method of making a semiconductor substrate having a through-hole includes a step of forming an etching mask on a semiconductor substrate in accordance with a pattern corresponding to the through-hole, and a step of forming the through-hole by etching the semiconductor substrate, on which the etching mask has been formed, by reactive ion etching. At least a part of the pattern corresponding to the through-hole is formed so that the semiconductor substrate is exposed in a frame-like shape along the inner edge of the through-hole.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Higuchi, Hiroshi Atsugi, JP 261 5886
Kamimura, Takayuki Kawasaki, JP 13 41

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