Cu-Co-Si-based copper alloy for electronic materials, and method of manufacturing same

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United States of America Patent

PATENT NO 9460825
APP PUB NO 20130087255A1
SERIAL NO

13701267

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Abstract

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Disclosed is a Cu—Co—Si-based copper alloy for electronic materials, which is capable of achieving high levels of strength, electrical conductivity, and also anti-setting property; and contains 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities; wherein out of second phase particles precipitated in the matrix a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×1012 to 1×1014 particles/mm3, and a ratio of the number density of particles having particle size of 5 nm or larger and smaller than 10 nm relative to the number density of particles having particle size of 10 nm or larger and 50 nm or smaller is 3 to 6.

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Patent Owner(s)

Patent OwnerAddress
JX NIPPON MINING & METALS CORPORATION6-3 OTEMACHI 2-CHOME CHIYODA-KU TOKYO 1008164

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuwagaki, Hiroshi Ibaraki, JP 30 289

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