Semiconductor devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 4, 2016
Grant Date -
N/A
app pub date -
Jun 25, 2015
filing date -
Jun 25, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Some embodiments include a semiconductor device having two gate electrodes which are of about a same gate width as one another, and having a first diffusion region between the two gate electrodes. The semiconductor device also has second and third diffusion regions on opposing sides of the two gate electrodes from one another and which sandwich the two gate electrodes and the first source/drain region therebetween. Each of the second and third diffusion regions is longer than the first diffusion region in a direction of the gate width. Some embodiments include a semiconductor device having a PMOS construction and an NMOS construction, with both constructions having a shorter middle diffusion region sandwiched between a pair of longer outer diffusion regions.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully