Backside transparent substrate roughening for UV light emitting diode
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United States of America Patent
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Oct 4, 2016
Grant Date -
Nov 5, 2015
app pub date -
Jul 10, 2015
filing date -
Mar 11, 2013
priority date (Note) -
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Abstract
In the present invention, a fabrication process for epitaxy onto back-side patterned substrate, where the substrate patterns were defined prior to epitaxy and therefore simplify post growth processing. Specifically, for LED devices, said fabrication process reduces the post growth processing steps required to obtain high LEE due to strong scattering of the back-side features defined on the substrate. The features defined on the back-side patterned substrate scatters strongly with light emitted from the LED devices. Methods of obtaining such features include wet and dry etching.
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