Self aligned replacement metal source/drain finFET
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United States of America Patent
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Oct 11, 2016
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app pub date -
Nov 17, 2015
filing date -
Nov 17, 2015
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Abstract
A method of a fin-shaped field effect transistor (finFET) device includes forming at least one fin that extends in a first direction; covering the fin with a dummy gate stack that extends in a second direction perpendicular to the first direction and that divides the at least one fin into source and drain regions on opposing sides of the replacement gate stack; covering the source and drain regions with an interlayer dielectric; replacing the dummy gate stack with a replacement metal gate stack; performing a first anneal at a first temperature after the replacement metal gate stack has replaced the dummy gate stack; and after performing the first anneal: recessing a top portion of the interlayer dielectric; and forming metallic source and drain regions.
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