Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines

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United States of America Patent

PATENT NO 9466790
APP PUB NO 20160072058A1
SERIAL NO

14933672

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Abstract

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A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Samachisa, George Milipitas, US 88 5696

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