Plasma-free metal etch
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United States of America Patent
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Oct 18, 2016
Grant Date -
May 14, 2015
app pub date -
Oct 14, 2014
filing date -
Nov 12, 2013
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Abstract
Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.
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